| PART |
Description |
Maker |
| GS8662D09E-333I GS8662D08E GS8662D09GE-200I GS8662 |
72Mb SigmaQuad-II Burst of 4 SRAM 8M X 9 DDR SRAM, 0.45 ns, PBGA165
72Mb SigmaQuad-II Burst of 4 SRAM 72Mb SigmaQuad -Ⅱ的4 SRAM的突
72Mb SigmaQuad-II Burst of 4 SRAM 8M X 8 DDR SRAM, 0.45 ns, PBGA165
72Mb SigmaQuad-II Burst of 4 SRAM 8M X 8 DDR SRAM, 0.5 ns, PBGA165
72Mb SigmaQuad-II Burst of 4 SRAM 8M X 9 DDR SRAM, 0.5 ns, PBGA165
|
GSI Technology, Inc.
|
| GS8640ZV18T-250I GS8640ZV18GT-167I GS8640ZV18T-300 |
72Mb NBT SRAMs
72Mb Pipelined and Flow Through Synchronous NBT SRAM
|
GSI[GSI Technology]
|
| GS8644ZV18B GS8644ZV18E-166I GS8644ZV18B-250 GS864 |
72Mb NBT SRAMs
72Mb Pipelined and Flow Through Synchronous NBT SRAM
|
GSI[GSI Technology]
|
| GS8642ZV36B-300I GS8642ZV36GB-200I |
72Mb Pipelined and Flow Through Synchronous NBT SRAM 2M X 36 ZBT SRAM, 5.5 ns, PBGA119
72Mb Pipelined and Flow Through Synchronous NBT SRAM 2M X 36 ZBT SRAM, 7.5 ns, PBGA119
|
GSI Technology, Inc.
|
| GS8644Z36E-166V GS8644Z18E-225V GS8644Z36E-225V |
72Mb Pipelined and Flow Through Synchronous NBT SRAM 2M X 36 ZBT SRAM, 7 ns, PBGA165
72Mb Pipelined and Flow Through Synchronous NBT SRAM 4M X 18 ZBT SRAM, 6.5 ns, PBGA165
72Mb Pipelined and Flow Through Synchronous NBT SRAM 2M X 36 ZBT SRAM, 6.5 ns, PBGA165
|
GSI Technology, Inc.
|
| R1Q4A3618BBG-33R R1Q4A3636BBG-33R R1Q4A3618BBG-40R |
36-Mbit DDRII SRAM 2-word Burst
|
Renesas Electronics Corporation
|
| K7K3236U2C K7K3218U2C |
1Mx36 & 2Mx18 DDRII CIO b2 SRAM
|
Samsung semiconductor
|
| R1QFA7218AB R1QCA7218AB R1QDA7218AB R1QCA7236AB R1 |
72-Mbit DDRII SRAM 2-word Burst
|
Renesas Electronics Corporation
|
| K7I163682B06 K7I161882B |
512Kx36 & 1Mx18 DDRII CIO b2 SRAM
|
Samsung semiconductor
|
| K7K3236T2C K7K3218T2C |
1Mx36 & 2Mx18 DDRII CIO b2 SRAM
|
Samsung semiconductor
|
| GS8662T08E-300I GS8662T08E-167 GS8662T08GE-167 GS8 |
72Mb SigmaCIO DDR-II Burst of 2 SRAM
|
GSI[GSI Technology]
|
| UPD44324364F5-E50-EQ2 UPD44324084 UPD44324084F5-E3 |
36M-BIT DDRII SRAM 4-WORD BURST OPERAT
|
NEC[NEC]
|
